Saves energy, boosts performance and efficiency: BASF's extremely durable PPA for next-generation IGBT semiconductors

Durable PPA for IGBT Semiconductors

BASF has developed a polyphthalamide (PPA) for next-generation power electronics, which is particularly suitable for manufacturing housings for IGBT (insulated-gate bipolar transistor) semiconductors. Ultramid^® Advanced N3U41 G6 addresses the growing demand for high-performance and reliable electronic components, for example for electric vehicles, high-speed trains, smart manufacturing or energy generation from renewable sources. Technology company Semikron Danfoss, a global leader in power electronics, now uses BASF's PPA for housings in its Semitrans 10 IGBT semiconductors, which can be installed in inverters for photovoltaic systems and wind energy systems. Thanks to its excellent chemical resistance and dimensional stability, the Ultramid^® Advanced N grade enhances the durability, long-term performance and reliability of these IGBT semiconductors, meeting growing needs for energy savings, higher energy density and greater efficiency. IGBT semiconductors enable efficient switching and control of electrical circuits in power electronics.

Ultramid® Advanced

BASF's proven Ultradur^® (PBT: polybutylene terephthalate) is widely used in today's IGBT semiconductors. The new PPA is designed to meet the stringent requirements of next-generation IGBT semiconductors for rapidly evolving power electronics. These require materials that can withstand high temperatures, provide lasting electrical insulation and maintain dimensional stability even under challenging environmental conditions, such as moisture, dust or dirt. Laser-sensitive Ultramid^® Advanced N3U41G6 with a non-halogenated flame retardant features high thermal stability with low water absorption and excellent electrical properties. It also achieves a high comparative tracking index (CTI) of 600 (according to the International Electrotechnical Commission (IEC), this is 60112). It thus supports the miniaturisation of IGBT semiconductors thanks to lower surface leakage and better insulation than materials previously used for power switches. The UL-certified grade exhibits an excellent electrical RTI (relative thermal index) of 150 °C.

BASF's PPA-based products  are available worldwide and ready for sampling by our customers”, says Jochen Seubert, BASF's principal expert for power electronics applications. “We expect this innovative material, supported by our technical assistance in part development, to contribute significantly to the advancement of power electronics and support the global transition to renewable energy sources,” Seubert added. In the manufacture of IGBT semiconductors, BASF's PPA is compatible with potting materials used to assemble semiconductors with metal pins and terminals after injection moulding.

Advanced Ultramid Products^® Advanced

BASF's polyphthalamide portfolio is based on six polymers: Ultramid^® Advanced N (PA9T), Ultramid^® Advanced T1000 (PA6T/6I), Ultramid^® Advanced T2000 (PA6T/66), Ultramid^® T KR (PA6T/6), Ultramid® T6000 (PA66/6T) and Ultramid^® T7000 (PA/PPA). They open the door to a new generation of lightweight, high-temperature plastic components in many different industries, such as automotive, electronics and electrical equipment, mechanical engineering and consumer goods.

To help its customers choose the right product for their specific applications, BASF has introduced a PPA product selection tool called “PPA Product Selector”, which enables simple and quick selection of the right products simply by setting a few filters.

Find more information about BASF's PPA portfolio here or contact your local representative: Milan Kopeček, +420 730 541 852, Milan.kopecek@basf.com